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DIM200PHM33-F000
DIM200PHM33-F000
Half Bridge IGBT Module
Replaces June 2003 version, issue PDS5606-2.1 PDS5606-3.1 April 2004
FEATURES
I I I I
KEY PARAMETERS VCES VCE(sat) * IC IC(PK) (typ) (max) (max) 3300V 2.8V 200A 400A
Soft Punch Through Silicon 10s Short Circuit Withstand Isolated MMC Base with AlN Substrates High Thermal Cycling Capability
* Measured at auxiliary terminals.
APPLICATIONS
I I I
1(E1/C2) 2(C1) 5(E1) 4(G1) 3(E2) 7(E2) 6(G2)
High Reliability Inverters Motor Controllers Traction Auxiliaries
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM200PHM33-F000 is a half bridge 3300V soft punch through, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
8(C1)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As: DIM200PHM33-F000 Note: When ordering, please use the whole part number.
Outline type code: P (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-F000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Visol QPD Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value (Diode arm) Isolation voltage - per module Partial discharge - per module Tcase = 90C 1ms, Tcase = 115C Tcase = 25C, Tj = 150C VR = 0, tp = 10ms, Tvj = 125C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RMS VGE = 0V, Tj = -25C Test Conditions Max. 3300 20 200 400 2.6 20 6000 10 Units V V A A kW kA2s V pC
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-F000
THERMAL AND MECHANICAL RATINGS
Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) AlN AlSiC 33mm 20mm 175 Parameter Thermal resistance - transistor (per switch) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per switch) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Tj Junction temperature Mounting torque 5Nm (with mounting grease) Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M5 -40 150 125 125 5 4 C C C Nm Nm 16 C/kW 96 C/kW Min. Typ. Max. 48 Units C/kW
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/9
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DIM200PHM33-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC =20mA, VGE = VCE VGE = 15V, IC = 200A VGE = 15V, IC = 200A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 200A IF = 200A, Tcase = 125C Cies Cres LM RINT SCData Input capacitance Reverse transfer capacitance Module inductance - pins 2 & 3 Internal transistor resistance - pins 2 & 3 Short circuit. ISC VCE = 25V, VGE = 0V, f = 1MHz VCE = 25V, VGE = 0V, f = 1MHz Tj = 125C, VCC = 2500V, tp 10s, VCE(max) = VCES - L*. di/dt IEC 60747-9 I1 I2 Min. 5.5 Typ. 400 6.5 2.8 3.6 200 400 2.9 3.0 36 0.55 40 0.5 1000 930 Max. 1 15 7.0 Units mA mA nA V V V A A V V nF nF nH m A A
Note:
Measured at auxiliary terminals. L* is the circuit inductance + LM
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr Qg EON Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Gate charge Turn-on energy loss Test Conditions IC = 200A VGE = 15V VCE = 1800V RG(ON) = RG(OFF) =16.5 Cge = 56nF L ~ 100nH IC = 200A, VGE = 15V, VCE = 1800V, RG(ON) = 7.5, Cge = 56nF, L ~ 100nH Min. Typ. 1950 170 220 1180 225 5 290 Max. Units ns ns mJ ns ns C mJ
Qrr Irr EREC
Diode reverse recovery charge IF = 200A, VR = 1800V, Diode reverse current dIF/dt = 1600A/s Diode reverse recovery energy
-
80 144 75
-
C A mJ
Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Test Conditions IC = 200A VGE = 15V VCE = 1800V RG(ON) = RG(OFF) =16.5 Cge = 56nF, L ~ 100nH IC = 200A, VGE = 15V, VCE = 1800V, RG(ON) =7.5, Cge = 56nF, L ~ 100nH Min. Typ. 2200 190 265 1150 280 390 Max. Units ns ns mJ ns ns mJ
Qrr Irr EREC
Diode reverse recovery charge IF = 200A, VR = 1800V, Diode reverse current dIF/dt = 1600A/s Diode reverse recovery energy
-
125 155 130
-
C A mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-F000
TYPICAL CHARACTERISTICS
400
400
Common emitter Tcase = 25C Vce is measured at power busbars and not the auxiliary terminals
Common emitter Tcase = 125C Vce is measured at power busbars and not the auxiliary terminals
300
300
Collector current, Ic - (A)
200
100 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 6.0
Collector current, Ic - (A)
200
100 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Collector-emitter voltage, Vce - (V) 7.0 8.0
0 0.0
Fig. 3 Typical output characteristics
400
Fig. 4 Typical output characteristics
1400 Conditions: Tc = 125C, IC = 200A, 1200 Vcc = 1800V, Cge = 56nF, Vge = 15V 1000
Switching energy, Esw - (mJ)
Conditions: Tc = 125C, Rg(on) = 7.5 Ohms, Rg(off) = 16.5 Ohms Cge = 56nF, Vcc = 1800V, 300 V = 15V ge
Switching energy, Esw - (mJ)
800
Eon (mJ) Eoff (mJ) Erec (mJ)
200
600
400
100
Eon (mJ) Eoff (mJ) Erec (mJ) 0 0 20 40 60 80 100 120 140 160 180 200
200
0 0
8
Collector current, IC - (A)
16 24 32 40 Gate resistance, Rg - (ohms)
48
56
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-F000
450 400 350 300 250 200 150 100 50 0 1.0 Collector current, IC - (A) Tj = 25C Tj = 125C
500
400
Forward current, IF - (A)
Chip 300
Module 200
Conditions: 100 Tcase = 125C, Vge = 15V, Rg(off) = 16.5 Ohms, Cge = 56nF
1.5
2.0
2.5 3.0 3.5 4.0 Forward voltage, VF - (V)
4.5
5.0
0 0
500
1000
1500
2000
2500
3000
3500
Collector emitter voltage, Vce - (V)
Fig. 7 Diode typical forward characteristics
350 Tj = 125C 300
Fig. 8 Reverse bias safe operating area
100
Diode Transistor
250
Transient thermal impedance, Zth (j-c) - (C/kW )
Reverse recovery current, Irr - (A)
10
200
150
1
100
50
IGBT Diode
0 0
500
1000 1500 2000 2500 Reverse voltage, VR - (V)
3000
3500
0.1 0.001
Ri (C/KW) i (ms) Ri (C/KW) i (ms) 0.01
1 1.79 0.13 3.58 0.13
2 11.26 5.80 22.52 5.80
3 15.77 48.03 31.53 48.03 1
4 19.11 248.53 38.23 248.53 10
0.1 Pulse width, tp - (s)
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-F000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
1(E1/C2) 2(C1) 5(E1) 4(G1) 8(C1) 3(E2) 7(E2) 6(G2)
Nominal weight: 750g Module outline type code: P Fig. 11 Package details
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97. France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97 Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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